BT136-600E

On-State RMS Current (It RMS) :
Rated Repetitive Off-State Voltage VDRM : 600 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Holding Current (Ih Max) : 15 mA
Off-State Leakage Current @ VDRM IDRM : 0.1 mA
Gate Trigger Voltage (Vgt) : 1.5 V
Gate Trigger Current (Igt) : 25 mA
Packaging : Rail
Breakover Current IBO Max : 27 A


Features:

·With TO-220AB package
·Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants

Description

The BT136-600E is designed as one kind of glass passivated, sensitive gate that can be used in general purpose bidirectional switching and phase control applications. The absolute maximum ratings of the BT136-600E can be summarized as:(1)RMS on-state current: 4 A;(2)Non-repetitive peak on-state current: 3.1 A to 25 A;(3)Repetitive rate of rise of on-state current after triggering: 50 A/us;(4)Peak gate current: 2 A;(5)Peak gate voltage: 5 V;(6)Peak reverse gate voltage: 5 V;(7)Peak gate power: 5 W;(8)Average gate power: 0.5 W;(10)Storage temperature: -40 to 150 °C.

The electrical characteristics of the BT136-600E can be summarized as:(1)Gate trigger current: 2.5 to 10 mA;(2)Latching current: 3.0 to 15 mA;(3)Holding current: 2.2 to 15 mA;(4)On-state voltage: 1.4 to 1.70 V;(5)Off-state leakage current: 0.1 to 0.5 mA;(6)Circuit commutated turn-off time: 50 us;(7)Gate controlled turn-on time: 2 us. If you want to know more information such as the electrical characteristics about the BT136-600E, please download the datasheet in www.seekic.com or www.chinaicmart.com.