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BS 170

Features: • N channel• Enhancement mode• Logic Level• VGS(th) = 0.8...2.0VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±14 V Gate-source peak voltage,aperiodic Vgs ± 20 V Continuous drain current TA = 25°C I...

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BS 170: Features: • N channel• Enhancement mode• Logic Level• VGS(th) = 0.8...2.0VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±14 V ...

BS 170 Data Sheet

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Part Number:
BS 170
Supply Ability:
5000

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Product Details

Description



Features:

• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V


Specifications

Parameter
Symbol
Value
Unit
Gate source voltage
VGS
±14
V
Gate-source peak voltage,aperiodic
Vgs
± 20
V
Continuous drain current TA = 25°C
ID
0.3
A
DC drain current, pulsed TA = 25 °C
IDpuls
1.2
A
Drain source voltage
VDS
60
V

Drain-gate voltageRGS = 20
VDGR
60
V
Power dissipation TA = 25 °C
Ptot
0.63
W
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
°C
Thermal resistance, chip to ambient air 1)
RthJA
200
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection


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