BS 107

Features: • N channel• Enhancement mode• Logic Level• VGS(th) = 0.8...2.0VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±14 V Gate-source peak voltage,aperiodic Vgs ± 20 V Continuous drain current TA = 31°C I...

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BS 107: Features: • N channel• Enhancement mode• Logic Level• VGS(th) = 0.8...2.0VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±14 V ...

floor Price/Ceiling Price

Part Number:
BS 107
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• N channel
• Enhancement mode
• Logic Level
VGS(th) = 0.8...2.0V



Specifications

Parameter
Symbol
Value
Unit
Gate source voltage
VGS
±14
V
Gate-source peak voltage,aperiodic
Vgs
± 20
V
Continuous drain current TA = 31°C
ID
0.13
A
DC drain current, pulsed TA = 25 °C
IDpuls
0.52
A
Drain source voltage
VDS
200
V

Drain-gate voltageRGS = 20
VDGR
200
V
Power dissipation TA = 25 °C
Ptot
1
W
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
°C
Thermal resistance, chip to ambient air 1)
RthJA
125
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection


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