Features: • N channel• Enhancement mode• Logic Level• VGS(th) = 0.8...2.0VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±14 V Gate-source peak voltage,aperiodic Vgs ± 20 V Continuous drain current TA = 31°C I...
BS 107: Features: • N channel• Enhancement mode• Logic Level• VGS(th) = 0.8...2.0VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±14 V ...
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Parameter |
Symbol |
Value |
Unit |
Gate source voltage |
VGS |
±14 |
V |
Gate-source peak voltage,aperiodic |
Vgs |
± 20 |
V |
Continuous drain current TA = 31°C |
ID |
0.13 |
A |
DC drain current, pulsed TA = 25 °C |
IDpuls |
0.52 |
A |
Drain source voltage |
VDS |
200 |
V |
Drain-gate voltageRGS = 20 |
VDGR |
200 |
V |
Power dissipation TA = 25 °C |
Ptot |
1 |
W |
Chip or operating temperature |
Tj |
-55 ... + 150 |
°C |
Storage temperature |
Tstg |
-55 ... + 150 |
°C |
Thermal resistance, chip to ambient air 1) |
RthJA |
125 |
K/W |
DIN humidity category, DIN 40 040 |
E |
||
IEC climatic category, DIN IEC 68-1 |
55 / 150 / 56 |