Features: · Direct interface to C-MOS, TTL,etc.· High-speed switching· No second breakdownApplicationThese products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers...
BST84: Features: · Direct interface to C-MOS, TTL,etc.· High-speed switching· No second breakdownApplicationThese products are not designed for use in life support appliances, devices, or systems where mal...
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These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Drain-source voltage | VDS | max. | 2000 V |
Gate-source voltage (open drain) | ±VGSO | max. | 20 V |
Drain current (DC) | ID | max. | 250 mA |
Drain current (peak) | IDM | max. | 800 mA |
Total power dissipation up to Tamb = 25 (note 1) | Ptot | max. | 1 W |
Storage temperature range | Tstg | -65 to + 150 | |
Junction temperature | Tj | max. | 150 |
THERMAL RESISTANCE | |||
From junction to ambient (note 1) | Rth j-a | = | 125 K/W |
N-channel vertical D-MOS transistor BST84 in SOT89 envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.