BST82

Features: ` Direct interface to C-MOS, TTL, etc.` High-speed switching` No second breakdown` Low RDS(on)ApplicationThese products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Phi...

product image

BST82 Picture
SeekIC No. : 004302450 Detail

BST82: Features: ` Direct interface to C-MOS, TTL, etc.` High-speed switching` No second breakdown` Low RDS(on)ApplicationThese products are not designed for use in life support appliances, devices, or sys...

floor Price/Ceiling Price

Part Number:
BST82
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` Direct interface to C-MOS, TTL, etc.
` High-speed switching
` No second breakdown
` Low RDS(on)



Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.




Specifications

Drain-source voltage VDS max. 80V
Drain-source voltage (non-repetitive peak; tp 2 ms) VDS(SM) max. 100V
Gate-source voltage (open drain) ±VGSO max. 20 V
Drain current (DC) ID max. 175 mA
Drain current (peak) IDM max. 600 mA
Total power dissipation up to Tamb = 25 (note 1) Ptot max. 300 W
Storage temperature range Tstg -65 to + 150
Junction temperature Tj max. 150
THERMAL RESISTANCE
From junction to ambient (note 1) Rth j-a = 430 K/W
Note
1. Transistors mounted on a ceramic substrate of 7 mm x 5 mm x 0.7 mm.


Description

N-channel enhancement mode vertical D-MOS transistor BST82 in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for telephone ringer and for application with relay, high-speed and line-transformer drivers.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Inductors, Coils, Chokes
Tapes, Adhesives
803
Isolators
Programmers, Development Systems
Cables, Wires - Management
Hardware, Fasteners, Accessories
View more