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BSS159

Features: • N channel• Depletion mode• High dynamic resistanceSpecifications Parameter Symbol Value Unit Drain source voltage VDS 50 V Drain-gate voltageRGS = 20 k I D puls 50 V Gate source voltage VGS ± 14 V Gate-sou...

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SeekIC No. : 004302394 Detail

BSS159: Features: • N channel• Depletion mode• High dynamic resistanceSpecifications Parameter Symbol Value Unit Drain source voltage VDS 50 V Drain-gate...

BSS159 Data Sheet

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Part Number:
BSS159
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• N channel
• Depletion mode
• High dynamic resistance


Specifications

Parameter
Symbol
Value
Unit
Drain source voltage
VDS
50
V
Drain-gate voltage
RGS = 20 k
I D puls
50
V
Gate source voltage
VGS
± 14
V
Gate-source peak voltage, aperiodic
Vgs
± 20
V
Continuous drain current
TA = 25 °C
ID
0.16
A
DC drain current, pulsed
TA = 25 °C
IDpuls
0.48
A

Power dissipation
TA = 25 °C

Ptot

0.36

W

Operating and storage temperature
T j , Tstg
-55...+150
°C

Thermal resistance, chip to ambient air

RthJA

350

K/W

Therminal resistance, chip-substrate - reverse side 1)

RthJSR

285

K/W

DIN humidity category, DIN 40 040

E
IEC climatic category; DIN IEC 68-1
55/150/56



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