BSS100

MOSFET DISC BY MFG 2/02

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SeekIC No. : 00164628 Detail

BSS100: MOSFET DISC BY MFG 2/02

floor Price/Ceiling Price

Part Number:
BSS100
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 14 V Continuous Drain Current : 0.22 A
Resistance Drain-Source RDS (on) : 6000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92-3    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 6000 mOhms
Continuous Drain Current : 0.22 A
Gate-Source Breakdown Voltage : +/- 14 V
Package / Case : TO-92-3


Features:

·BSS100: 0.22A, 100V. RDS(ON) = 6W @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6W @ VGS = 10V
·High density cell design for extremely low RDS(ON).
·Voltage controlled small signal switch.
·Rugged and reliable.



Specifications

Symbol
Parameter
BSS100
BSS123
Units
VDSS
Drain-Source Voltage
100
V
VDGR
Drain-Gate Voltage (RGS < 20KW)
100
V
VGSS
Gate-Source Voltage - Continuous ± 14 V
- Non Repetitive (TP < 50 mS)
± 14
V
± 20
ID
Drain Current - Continuous 0.22 0.17 A
- Pulsed
0.22
0.17
A
0.9
0.68
PD
Total Power Dissipation @ TA = 25°C
0.63
0.36
W
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
THERMAL CHARACTERISTICS
RJA
Thermal Resistacne, Junction-to-Ambient
200
350
°C/W



Description

These N-Channel logic level enhancement mode power field effect transistors BSS100 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. BSS100 is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.




Parameters:

Technical/Catalog InformationBSS100
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C220mA
Rds On (Max) @ Id, Vgs6 Ohm @ 220mA, 10V
Input Capacitance (Ciss) @ Vds 60pF @ 25V
Power - Max630mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs2nC @ 10V
Package / CaseTO-92
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BSS100
BSS100



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