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BSS138LT3: MOSFET 50V 200mA N-Channel

BSS138LT3 Data Sheet

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Part Number:: BSS138LT3
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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Features: • N channel• Enhancement mode• Logic Level• VGS(th) = 0.8...2.0V...

Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	50 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	0.2 A
Resistance Drain-Source RDS (on) :	3500 mOhms at 5 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-23	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 50 V
Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 3500 mOhms at 5 V

Parameters:

Technical/Catalog Information	BSS138LT3
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	200mA
Rds On (Max) @ Id, Vgs	3.5 Ohm @ 200mA, 5V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	225mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSS138LT3 BSS138LT3

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BSS138LT3

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