Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: SMD/SMT
Packaging
: Reel
Package / Case
: SOT-23
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 50 V
Continuous Drain Current
: 0.22 A
Resistance Drain-Source RDS (on)
: 3.5 Ohms
Features: · Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output LeakageSpecifications
|
Characteristic |
Symbol |
BSS138W |
Units |
|
Drain-Source Voltage |
VDSS |
50 |
V |
|
Drain-Gate Voltage (Note 1) |
VDGR |
50 |
V |
|
Gate-Source Voltage |
Continuous |
VGSS |
±20 |
V |
|
Drain Current (Note 2) |
Continuous |
ID |
200 |
mA |
|
Total Power Dissipation (Note 2) |
Pd |
300 |
mW |
|
Thermal Resistance, Junction to Ambient |
RJA |
417 |
/W |
|
Operating and Storage Temperature Range |
Tj, TSTG |
-55 to +150 |
|
DescriptionThe BSS138 is designed as one kind of SOT23 N-channel enhancement mode vertical DMOS FET device that has some points of absolute maximum ratings:(1)Drain-Source Voltage: 50 V;(2)Continuous Drain Current at Tamb=25°C: 200 mA;(3)Pulsed Drain Current: 800 mA;(4)Gate-Source Voltage: ±20 V;(5)Power Dissipation at Tamb=25°C: 360 mW;(6)Operating and Storage Temperature Range: -55 to +150 °C.
The electrical characteristics of the BSS138 can be summarized as:(1)Drain-Source Breakdown Voltage: 50 V;(2)Gate-Source Threshold Voltage: 0.5 to 1.5 V;(3)Gate-Body Leakage: 100 nA;(4)Static Drain-Source On-State Resistance: 3.5 ;(5)Forward Transconductance: 120 mS;(6)Input Capacitance: 50 pF;(7)Common Source Output Capacitance: 25 pF;(8)Reverse Transfer Capacitance: 8 pF;(9)Turn-On Delay Time: 10 ns;(10)Rise Time: 10 ns. If you want to know more information such as the electrical characteristics about the BSS138, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Parameters: | Technical/Catalog Information | BSS138 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 220mA |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 220mA, 10V |
| Input Capacitance (Ciss) @ Vds | 27pF @ 25V |
| Power - Max | 360mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 2.4nC @ 10V |
| Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSS138
BSS138
BSS138DKR ND
BSS138DKRND
BSS138DKR
|
BSS138 Data Sheet
