BSS129

The BSS129 is designed as one kind of SIPMOS small-signal transistor that has seven points of features:(1)VDS: 240 V;(2)ID: 0.15 A;(3)RDS(on): 20 ;(4)N channel;(5)Depletion mode;(6)High dynamic resistance;(7)Available grouped in VGS(th).

The absolute maximum ratings of BSS129 can be summarized as:(1)Drain-source voltage: 240 V;(2)Drain-gate voltage, RGS = 20 k: 240 V;(3)Gate-source voltage: ±14 V;(4)Gate-source peak voltage, aperiodic: ±20 V;(5)Continuous drain current, TA = 37 °C: 0.15 A;(6)Pulsed drain current, TA = 25 °C: 0.45 A;(7)Max. power dissipation, TA = 25 °C: 1.0 W;(8)Operating and storage temperature range: -55 to +150 °C;(9)Thermal resistance, chip-ambient: </= 125 K/W;(10)DIN humidity category, DIN 40 040: E;(11)IEC climatic category, DIN IEC 68-1: 55/150/56.

The electrical characteristics of BSS129 can be summarized as:(1)Drain-source breakdown voltage: 240 V;(2)Gate threshold voltage: -1.8 to -0.7 V;(3)Gate-source leakage current: 10 to 100 nA;(4)Drain-source on-resistance: 7.0 to 20 ;(5)Forward transconductance: 0.14 to 0.2 S;(6)Input capacitance: 110 to 150 pF;(7)Output capacitance: 20 to 30 pF;(8)Reverse transfer capacitance: 7 to 10 pF;(9)Continuous reverse drain current: 0.15 A;(10)Pulsed reverse drain current: 0.45 A. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.