BSS123,215, US $ .03-.03 , NXP Semiconductors, BSS123,215 DataSheet download, circuit diagram from SeekIC.com

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BSS123,215: MOSFET N-CH TRNCH 100V .15A

BSS123,215 Data Sheet

US $ .03~.03 / Piece | Get Latest Price

Part Number:: BSS123,215
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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What is this?

BSS100 evaluate
MOSFET DISC BY MFG 2/02
BSS100_D75Z evaluate
MOSFET DISC BY MFG 2/02
BSS101 evaluate
Features: • N channel• Enhancement mode• Logic Level• VGS(th) = 0.8...2.0V...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	0.15 A
Resistance Drain-Source RDS (on) :	6000 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-23	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 0.15 A
Resistance Drain-Source RDS (on) : 6000 mOhms

Parameters:

Technical/Catalog Information	BSS123,215
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	150mA
Rds On (Max) @ Id, Vgs	6 Ohm @ 120mA, 10V
Input Capacitance (Ciss) @ Vds	40pF @ 25V
Power - Max	250mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	SST3 (SOT-23-3)
FET Feature	Standard
Drawing Number	568; SOT23; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSS123,215 BSS123,215 568 4873 2 ND 56848732ND 568-4873-2

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BSS123,215

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