BSS123LT3

MOSFET 100V 170mA N-Channel

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SeekIC No. : 00165461 Detail

BSS123LT3: MOSFET 100V 170mA N-Channel

floor Price/Ceiling Price

Part Number:
BSS123LT3
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.17 A
Resistance Drain-Source RDS (on) : 6000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 0.17 A
Resistance Drain-Source RDS (on) : 6000 mOhms


Parameters:

Technical/Catalog InformationBSS123LT3
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C170mA
Rds On (Max) @ Id, Vgs6 Ohm @ 100mA, 10V
Input Capacitance (Ciss) @ Vds 20pF @ 25V
Power - Max225mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BSS123LT3
BSS123LT3



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