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BSS123LT1G

MOSFET 100V 170mA N-Channel

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SeekIC No. : 00146554 Detail

BSS123LT1G: MOSFET 100V 170mA N-Channel

BSS123LT1G Data Sheet

floor Price/Ceiling Price

US $ .05~.19 / Piece | Get Latest Price
Part Number:
BSS123LT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.19
  • $.13
  • $.1
  • $.05
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.17 A
Resistance Drain-Source RDS (on) : 6000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 0.17 A
Resistance Drain-Source RDS (on) : 6000 mOhms


Parameters:

Technical/Catalog InformationBSS123LT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C170mA
Rds On (Max) @ Id, Vgs6 Ohm @ 100mA, 10V
Input Capacitance (Ciss) @ Vds 20pF @ 25V
Power - Max225mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSS123LT1G
BSS123LT1G
BSS123LT1GOSDKR ND
BSS123LT1GOSDKRND
BSS123LT1GOSDKR



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