MOSFET 100V 170mA N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.17 A | ||
Resistance Drain-Source RDS (on) : | 6000 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Rating |
Symbol |
Value |
Unit |
Drain−Source Voltage |
VDSS |
100 |
Vdc |
Gate−Source Voltage − Continuous − Non−repetitive (tp 50s) |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
Drain Current − Continuous (Note 1) − Pulsed (Note 2) |
ID IDM |
0.17 0.68 |
Adc |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
Technical/Catalog Information | BSS123LT1 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 170mA |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 100mA, 10V |
Input Capacitance (Ciss) @ Vds | 20pF @ 25V |
Power - Max | 225mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | BSS123LT1 BSS123LT1 BSS123LT1OSTR ND BSS123LT1OSTRND BSS123LT1OSTR |