BSS123

MOSFET SOT-23 N-CH LOGIC

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SeekIC No. : 00146167 Detail

BSS123: MOSFET SOT-23 N-CH LOGIC

floor Price/Ceiling Price

US $ .06~.18 / Piece | Get Latest Price
Part Number:
BSS123
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.18
  • $.16
  • $.09
  • $.06
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/7

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.17 A
Resistance Drain-Source RDS (on) : 6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 6 Ohms
Continuous Drain Current : 0.17 A


Features:

·BSS100: 0.22A, 100V. RDS(ON) = 6W @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6W @ VGS = 10V
·High density cell design for extremely low RDS(ON).
·Voltage controlled small signal switch.
·Rugged and reliable.





Specifications

Symbol
Parameter
BSS100
BSS123
Units
VDSS
Drain-Source Voltage
100
V
VDGR
Drain-Gate Voltage (RGS < 20KW)
100
V
VGSS
Gate-Source Voltage - Continuous ± 14 V
- Non Repetitive (TP < 50 mS)
± 14
V
± 20
ID
Drain Current - Continuous 0.22 0.17 A
- Pulsed
0.22
0.17
A
0.9
0.68
PD
Total Power Dissipation @ TA = 25°C
0.63
0.36
W
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
THERMAL CHARACTERISTICS
RJA
Thermal Resistacne, Junction-to-Ambient
200
350
°C/W





Description

These N-Channel logic level enhancement mode power field effect transistors BSS123 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.



The BSS123 is a SIPMOS(C) small-signal-transistor.For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Features of the BSS123 are:(1)N-channel; (2)enhancement mode; (3)logic level; (4)dv/dt rated.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

The absolute maximum ratings of the BSS123 can be summarized as:(1)pulsed drain current:0.68A;(2)storage temperature:-55 to 150;(3)operating temperature:-55 to 150;(4)gate source voltage:±20 V;(5)power dissipation:0.36W.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Due to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office.

At present there is not too much information about this model.If you are willing to find more about BSS123, please pay attention to our web! We will promptly update the relevant information.






Parameters:

Technical/Catalog InformationBSS123
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C170mA
Rds On (Max) @ Id, Vgs6 Ohm @ 170mA, 10V
Input Capacitance (Ciss) @ Vds 73pF @ 25V
Power - Max360mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs2.5nC @ 10V
Package / CaseSOT-23
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSS123
BSS123
BSS123NDKR ND
BSS123NDKRND
BSS123NDKR



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