MOSFET SOT-23 N-CH LOGIC
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.17 A | ||
Resistance Drain-Source RDS (on) : | 6 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Symbol |
Parameter |
BSS100 |
BSS123 |
Units |
VDSS |
Drain-Source Voltage |
100 |
V | |
VDGR |
Drain-Gate Voltage (RGS < 20KW) |
100 |
V | |
VGSS |
Gate-Source Voltage - Continuous ± 14 V - Non Repetitive (TP < 50 mS) |
± 14 |
V | |
± 20 | ||||
ID |
Drain Current - Continuous 0.22 0.17 A - Pulsed |
0.22 |
0.17 |
A |
0.9 |
0.68 | |||
PD |
Total Power Dissipation @ TA = 25°C |
0.63 |
0.36 |
W |
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to 150 |
°C | |
TL |
Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds |
300 |
°C | |
THERMAL CHARACTERISTICS | ||||
RJA |
Thermal Resistacne, Junction-to-Ambient |
200 |
350 |
°C/W |
These N-Channel logic level enhancement mode power field effect transistors BSS123 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.
The BSS123 is a SIPMOS(C) small-signal-transistor.For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Features of the BSS123 are:(1)N-channel; (2)enhancement mode; (3)logic level; (4)dv/dt rated.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
The absolute maximum ratings of the BSS123 can be summarized as:(1)pulsed drain current:0.68A;(2)storage temperature:-55 to 150;(3)operating temperature:-55 to 150;(4)gate source voltage:±20 V;(5)power dissipation:0.36W.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Due to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office.
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Technical/Catalog Information | BSS123 |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 170mA |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 170mA, 10V |
Input Capacitance (Ciss) @ Vds | 73pF @ 25V |
Power - Max | 360mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 2.5nC @ 10V |
Package / Case | SOT-23 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BSS123 BSS123 BSS123NDKR ND BSS123NDKRND BSS123NDKR |