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BSS123-7

MOSFET 100V 360mW

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SeekIC No. : 00167218 Detail

BSS123-7: MOSFET 100V 360mW

BSS123-7 Data Sheet

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Part Number:
BSS123-7
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 170 mA
Resistance Drain-Source RDS (on) : 6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 6 Ohms
Continuous Drain Current : 170 mA


Parameters:

Technical/Catalog InformationBSS123-7
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C170mA
Rds On (Max) @ Id, Vgs6 Ohm @ 170mA, 10V
Input Capacitance (Ciss) @ Vds 60pF @ 25V
Power - Max300mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BSS123 7
BSS1237
BSS123DITR ND
BSS123DITRND
BSS123DITR



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