Features: • N channel• Enhancement mode• Logic Level• VGS(th) = 0.6...1.2VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±14 V Gate-source peak voltage,aperiodic Vgs ± 20 V Continuous drain current TA = 25°C I...
BSP 88: Features: • N channel• Enhancement mode• Logic Level• VGS(th) = 0.6...1.2VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±14 V ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Value |
Unit |
Gate source voltage |
VGS |
±14 |
V |
Gate-source peak voltage,aperiodic |
Vgs |
± 20 |
V |
Continuous drain current TA = 25°C |
ID |
032 |
A |
DC drain current, pulsed TA = 25 °C |
IDpuls |
1.28 |
A |
Drain source voltage |
VDS |
240 |
V |
Drain-gate voltageRGS = 20 |
VDGR |
240 |
V |
Power dissipation TA = 25 °C |
Ptot |
1.7 |
W |
Chip or operating temperature |
Tj |
-55 ... + 150 |
°C |
Storage temperature |
Tstg |
-55 ... + 150 |
°C |
Thermal resistance, chip to ambient air |
RthJA |
72 |
K/W |
Thermal resistance, chip to ambient air 1) |
RthJA |
12 |
K/W |
DIN humidity category, DIN 40 040 |
E |
||
IEC climatic category, DIN IEC 68-1 |
55 / 150 / 56 |