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BSP 752 T

Features: • Overload protection• Current limitation• Short circuit protection• Thermal shutdown with restart• Overvoltage protection (including load dump)• Fast demagnetization of inductive loads• Reverse battery protection with external resistor• CM...

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BSP 752 T: Features: • Overload protection• Current limitation• Short circuit protection• Thermal shutdown with restart• Overvoltage protection (including load dump)• Fast d...

BSP 752 T Data Sheet

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Part Number:
BSP 752 T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown with restart
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection with external resistor
• CMOS compatible input
• Loss of GND and loss of Vbb protection
• ESD - Protection
• Very low standby current


Application

• All types of resistive, inductive and capacitive loads
• C compatible power switch for 12 V, 24 V and 42 V DC applications
• Replaces electromechanical relays and discrete circuits


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Supply voltage
Vbb
52
V
Supply voltage for full short circuit protection
Tj = -40...+150 °C
V bb(SC)
50
Continuous input voltage
VIN
-10 ... +16
A
Load current (Short - circuit current, see page 5)
IL
self limited
mA
Current through input pin (DC)
IIN
± 5
°C
Operating temperature
Tj
-40 ...+150
Storage temperature
Tstg
-55 ... +150
W
Power dissipation 1)
Ptot
1.5
Inductive load switch-off energy dissipation 1)2)
single pulse, (see page 8)
Tj =150 °C, IL = 1 A
EAS
125
mJ
Load dump protection2) V LoadDump 3) = VA + VS
RI=2, td=400ms, VIN= low or high, VA=13,5V
RL = 27
VLoaddump
73.5
83.5
V
Electrostatic discharge voltage (Human Body Model)
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
all other pins
VESD
± 1
± 5
kV
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 16)
2not subject to production test, specified by design
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 resistor in GND connection. A resistor for the protection of the input is integrated.


Description

N channel vertical power FET BSP 752 T with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.


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