Features: • N channel• Enhancement mode• Avalanche rated• VGS(th)= 2.1 ... 4.0 VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±20 V Continuous drain current TA = 31 °CTA = 100 °C ID 2.91.85 A DC drain current,...
BSP 320 S: Features: • N channel• Enhancement mode• Avalanche rated• VGS(th)= 2.1 ... 4.0 VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±20 ...
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Parameter |
Symbol |
Value |
Unit |
Gate source voltage |
VGS |
±20 |
V |
Continuous drain current TA = 31 °C TA = 100 °C |
ID |
2.9 |
A |
DC drain current, pulsed TA = 25 °C |
IDpuls |
11.6 |
A |
Avalanche energy, single pulse ID =2.9 A, VDD = 25 V, RGS = 25 L = 14.3 mH, Tj = 25 °C |
EAS |
60 |
mJ |
Avalanche energy, periodic limited byTj(max) |
EAR |
0.18 |
mJ |
Avalanche current, repetitive,limited byTj(max) |
IAR |
2.9 |
A |
Reverse diode dv/dt IS = 2.9 A, VDS = 40 V, di/dt = 200 A/s Tjmax = 150 °C |
dv/dt |
6 |
KV/s |
Power dissipation TA = 25 °C |
Ptot |
1.8 |
W |
Chip or operating temperature |
Tj |
-55 ... + 150 |
°C |
Storage temperature |
Tstg |
-55 ... + 150 |
°C |
Thermal resistance, chip to ambient air |
RthJA |
70 |
K/W |
Thermal resistance, chip to ambient air 1) |
RthJA |
17 |
K/W |
IEC climatic category, DIN IEC 68-1 |
55 / 150 / 56 |