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BSP 298

Features: • N channel• Enhancement mode• Avalanche rated• VGS(th)= 2.1 ... 4.0 VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±20 V Continuous drain current TA = 31 °C ID 0.5 A DC drain current, pulsed TA = 25 °...

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BSP 298: Features: • N channel• Enhancement mode• Avalanche rated• VGS(th)= 2.1 ... 4.0 VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±20 ...

BSP 298 Data Sheet

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Part Number:
BSP 298
Supply Ability:
5000

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Upload time: 2024/9/27

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Product Details

Description



Features:

• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V


Specifications

Parameter
Symbol
Value
Unit
Gate source voltage
VGS
±20
V
Continuous drain current TA = 31 °C
ID
0.5
A
DC drain current, pulsed TA = 25 °C
IDpuls
2
A
Avalanche energy, single pulse
ID = 1.35 A, VDD = 50 V, RGS = 25 W
L = 125 mH, Tj = 25 °C		    EAS            130    mJ
Power dissipation TA = 25 °C
Ptot
1.8
W
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
°C
Thermal resistance, chip to ambient air
RthJA
70
K/W
Thermal resistance, chip to ambient air 1)
RthJA
10
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection


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