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BSP296E6327: MOSFET N-CH 200 V 2.6 A

BSP296E6327 Data Sheet

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Part Number:: BSP296E6327
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	1.1 A
Resistance Drain-Source RDS (on) :	0.62 Ohms	Configuration :	Single Dual Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-223	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 1.1 A
Resistance Drain-Source RDS (on) : 0.62 Ohms

Parameters:

Technical/Catalog Information	BSP296E6327
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	1.1A
Rds On (Max) @ Id, Vgs	700 mOhm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds	364pF @ 25V
Power - Max	1.79W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17.2nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSP296E6327 BSP296E6327 BSP296INTR ND BSP296INTRND BSP296INTR

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