Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -VDS drain-source voltage 200 V -VGSO gate-source voltage 20 V -ID DC dr...
BSP204A: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -VDS drain-sourc...
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
-VDS |
drain-source voltage |
200 |
V | ||
-VGSO |
gate-source voltage |
|
20 |
V | |
-ID |
DC drain current |
DC value |
250 |
mA | |
-IDM |
peak drain current |
peak value |
600 |
A | |
Ptot |
total power dissipation |
up to Tamb = 25 °C (note 1) |
1 |
W | |
Tstg |
storage temperature |
-65 |
150 |
°C | |
Tj |
operating junction temperature |
150 |
°C |
Note
1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead
minimum 10 mm x 10 mm.
P-channel enhancement mode vertical D-MOS transistor BSP204A in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers.