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BSP205

Features: · Very low R DS(on)· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications Drain-source voltage -VDS max. 60 V Gate-source voltage (open drain) ± VGSO max. 20 V Drain current (DC) -ID max. 275 ...

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SeekIC No. : 004302307 Detail

BSP205: Features: · Very low R DS(on)· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications Drain-source voltage -VDS max. 60 V Gate-sourc...

BSP205 Data Sheet

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Part Number:
BSP205
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Very low R DS(on)
· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown


Specifications

Drain-source voltage
-VDS
max.
60
V
Gate-source voltage (open drain)
± VGSO
max.
20
V
Drain current (DC)
-ID
max.
275
mA
Drain current (peak)
-IDM
max.
550
mA
Total power dissipation up to Tamb = 25 °C (note 1)
Ptot
max.
1.5
W
Storage temperature range
Tstg
-65 to + 150
°C
Junction temperature
Tj
max.
150
°C
Note
1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mm X 1.5 mm; mounting pad for the drain lead min.
6 cm 2.


Description

P-channel enhancement mode vertical D-MOS transistor BSP205 in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.




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