MOSFET P-CH DMOS 250V 225MA
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 250 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.225 A | ||
Resistance Drain-Source RDS (on) : | 15000 mOhms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
Technical/Catalog Information | BSP225,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25° C | 225mA |
Rds On (Max) @ Id, Vgs | 15 Ohm @ 200mA, 10V |
Input Capacitance (Ciss) @ Vds | 90pF @ 25V |
Power - Max | 1.5W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT223; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BSP225,115 BSP225,115 |