BSP225 Selling Leads, Price trend, BSP225 DataSheet download, circuit diagram from SeekIC.com

Features: · Low R DS(on)· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -VDS drain-source voltage 250 V -VGSO gate-source voltage open drain 2...

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SeekIC No. : 004302312 Detail

BSP225: Features: · Low R DS(on)· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -VDS ...

BSP225 Data Sheet

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Part Number:: BSP225
Supply Ability:: 5000

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1~5000

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15 Days

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Upload time: 2024/12/21

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Product Details

Description

Features:

· Low R _DS(on)· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
-V_DS	drain-source voltage			250	V
-V_GSO	gate-source voltage	open drain		20	V
-I_D	DC drain current	DC value		225	mA
-I_DM	peak drain current	peak value		600	A
P_tot	total power dissipation	up to T_amb = 25 °C (note 1)		1.5	W
T_stg	storage temperature		-65	150	°C
T_j	operating junction temperature			150	°C

Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm².

Description

P-channel enhancement mode vertical D-MOS transistor BSP225 in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers.

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BSP225

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