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BSP225

Features: · Low R DS(on)· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -VDS drain-source voltage 250 V -VGSO gate-source voltage open drain 2...

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SeekIC No. : 004302312 Detail

BSP225: Features: · Low R DS(on)· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -VDS ...

BSP225 Data Sheet

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Part Number:
BSP225
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

· Low R DS(on)
· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown

 


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-VDS
drain-source voltage
250
V
-VGSO
gate-source voltage
open drain
20
V
-ID
DC drain current
DC value
225
mA
-IDM
peak drain current
 peak value
600
A
Ptot
total power dissipation
up to Tamb = 25 °C (note 1)
1.5
W
Tstg
storage temperature
-65
150
°C
Tj
operating junction temperature
150
°C

Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2.




Description

P-channel enhancement mode vertical D-MOS transistor BSP225 in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers.




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