Features: · Low R D S(on)· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -VDS drain-source voltage 200 V -VGSO gate-source voltage open drain ...
BSP220: Features: · Low R D S(on)· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -VD...
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
-VDS |
drain-source voltage |
200 |
V | ||
-VGSO |
gate-source voltage |
open drain |
20 |
V | |
-ID |
DC drain current |
DC value |
225 |
mA | |
-IDM |
peak drain current |
peak value |
600 |
A | |
Ptot |
total power dissipation |
up to Tamb = 25 °C (note 1) |
1.5 |
W | |
Tstg |
storage temperature |
-65 |
150 |
°C | |
Tj |
operating junction temperature |
150 |
°C |
Note
1. Device mounted on an epoxy printed-circuit board 40 x 40 x 1.5 mm; mounting pad for the drain lead minimum 6 cm2.
P-channel enhancement mode vertical D-MOS transistor BSP220 in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers.