Specifications Parameter Symbol BSP19A BSP20A Unit Collector-Base Voltage VCBO 350 250 V Collector-Emitter Voltage VCEO 400 300 Emitter-Base Voltage VEBO 5.0 Collector Current IC 1000 A Total Device Dissipation, TA = 25°...
BSP20AT1: Specifications Parameter Symbol BSP19A BSP20A Unit Collector-Base Voltage VCBO 350 250 V Collector-Emitter Voltage VCEO 400 300 Emitter-Base Voltag...
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Parameter |
Symbol |
BSP19A | BSP20A |
Unit |
Collector-Base Voltage |
VCBO |
350 |
250 |
V |
Collector-Emitter Voltage |
VCEO |
400 |
300 | |
Emitter-Base Voltage |
VEBO |
5.0 | ||
Collector Current |
IC |
1000 |
A | |
Total Device Dissipation, TA = 25°C (1) |
PD |
0.8 6.4 |
Watts mW/°C | |
Storage Temperature Range |
Tstg |
65 to 150 |
°C | |
Junction Temperature |
Tj |
150 |
°C |
1. 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
This family of NPN Silicon Epitaxial transistors BSP20AT1 is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
• High Voltage: V(BR)CEO of 250 and 350 Volts.
• The SOT-223 package can be soldered using wave or reflow.
• SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
• Available in 12 mm Tape and Reel T1 Configuration 7 inch/1000 unit reel T3 Configuration 13 inch/4000 unit reel
• PNP Complement is BSP16T1