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Specifications Parameter Symbol BSP19A BSP20A Unit Collector-Base Voltage VCBO 350 250 V Collector-Emitter Voltage VCEO 400 300 Emitter-Base Voltage VEBO 5.0 Collector Current IC 1000 A Total Device Dissipation, TA = 25°...

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SeekIC No. : 004302310 Detail

BSP20AT1: Specifications Parameter Symbol BSP19A BSP20A Unit Collector-Base Voltage VCBO 350 250 V Collector-Emitter Voltage VCEO 400 300 Emitter-Base Voltag...

BSP20AT1 Data Sheet

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Part Number:: BSP20AT1
Supply Ability:: 5000

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Upload time: 2024/9/27

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Product Details

Description

Specifications

Parameter	Symbol	BSP19A	BSP20A	Unit
Collector-Base Voltage	V_CBO	350	250	V
Collector-Emitter Voltage	V_CEO	400	300
Emitter-Base Voltage	V_EBO	5.0
Collector Current	I_C	1000		A
Total Device Dissipation, T_A= 25°C ⁽¹⁾	P_D	0.8 6.4		Watts mW/°C
Storage Temperature Range	T_stg	65 to 150		°C
Junction Temperature	T_j	150		°C

1. 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.

Description

This family of NPN Silicon Epitaxial transistors BSP20AT1 is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
• High Voltage: V(BR)CEO of 250 and 350 Volts.
• The SOT-223 package can be soldered using wave or reflow.
• SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
• Available in 12 mm Tape and Reel T1 Configuration 7 inch/1000 unit reel T3 Configuration 13 inch/4000 unit reel
• PNP Complement is BSP16T1

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BSP20AT1

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