Features: · Very low R DS(on)· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications Drain-source voltage -VDS max. 60 V Gate-source voltage (open drain) ± VGSO max. 20 V Drain current (DC) -ID max. 350 ...
BSP206: Features: · Very low R DS(on)· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications Drain-source voltage -VDS max. 60 V Gate-sourc...
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Drain-source voltage |
-VDS |
max. |
60 |
V |
Gate-source voltage (open drain) |
± VGSO |
max. |
20 |
V |
Drain current (DC) |
-ID |
max. |
350 |
mA |
Drain current (peak) |
-IDM |
max. |
700 |
mA |
Total power dissipation up to Tamb = 25 °C (note 1) |
Ptot |
max. |
1.5 |
W |
Storage temperature range |
Tstg |
-65 to + 150 |
°C | |
Junction temperature |
Tj |
max. |
150 |
°C |
P-channel enhancement mode vertical D-MOS transistor BSP206 in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.