MOSFET N/P Channel 60V/-60V
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 60 V / - 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3 A, - 2 A | ||
Resistance Drain-Source RDS (on) : | 90 mOhms, 220 mOhms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DSO-8 | Packaging : | Reel |
Parameter |
Symbol |
Values |
Unit | |
N |
P | |||
Continuous drain current TA = 25 °C TA = 70 °C |
ID |
3 2.4 |
-2 -1.6 |
A |
Pulsed drain current, one channel active TA = 25 °C |
IDpuls |
12 |
-8 |
A |
Avalanche energy, single pulse ID = 3.1 A , VDD = 25 V, RGS = 25 ID = -2 A , VDD = -25 V, RGS = 25 |
EAS |
47 |
70 |
mJ |
Avalanche energy, periodic limited by T jmax |
E AR |
0.2 |
0.2 |
mJ |
Reverse diode dv/dt IS = 3.1 A, VDS = 48 V, di/dt = 200 A/s, IS = -2 A, VDS = -48 T jmax = 150 °C |
dv/dt |
6 |
6 |
kV/s |
Gate source voltage |
VGS |
±20 |
±20 |
V |
Power dissipation, one channel active |
Ptot |
2 |
2 |
W |
Operating temperature |
T j , T stg |
-55 ... +150 |
°C | |
IEC climatic category, DIN IEC 68-1 |
55/150/56 |
°C |