MOSFET DUAL N-CH 60V 2.6A 8-SOIC
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Series: | SIPMOS® | Manufacturer: | Infineon Technologies |
FET Type: | 2 N-Channel (Dual) | FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V | Current - Continuous Drain (Id) @ 25° C: | 2.6A |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 2.6A, 4.5V | Vgs(th) (Max) @ Id: | 2V @ 20µA |
Drain Current (Idss at Vgs=0) : | 8 mA to 20 mA | Gate Charge (Qg) @ Vgs: | 20nC @ 10V |
Input Capacitance (Ciss) @ Vds: | 380pF @ 25V | Power - Max: | 2W |
Mounting Type: | Surface Mount | Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | PG-DSO-8 |
Parameter |
Symbol |
Values |
Unit |
Continuous drain current TA = 25 °C TA = 70 °C |
LD |
2.6 |
A |
Pulsed drain current, one channel active TA = 25 °C |
L Dpulse |
10.4 |
A |
Avalanche energy, single pulse ID = 3.1 A , VDD = 25 V, RGS = 25 ID = -2 A , VDD = -25 V, RGS = 25 |
EAS |
60 |
mJ |
Avalanche current,periodic limited by Tjmax |
IAR |
2.6 |
A |
Avalanche energy, periodic limited by T jmax |
E AR |
0.18 |
mJ |
Reverse diode dv/dt IS = 3.1 A, VDS = 48 V, di/dt = 200 A/s, IS = -2 A, VDS = -48 T jmax = 150 °C |
dv/dt |
6 |
kV/s |
Gate source voltage |
VGS |
±20 |
V |
Power dissipation, one channel active |
Ptot |
2 |
W |
Operating temperature |
T j , T stg |
-55 ... +150 |
°C |
IEC climatic category, DIN IEC 68-1 |
55/150/56 |
°C |