BSO4410

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Gate Charge (Qg) @ Vgs: 21nC @ 5V
Input Capacitance (Ciss) @ Vds: 1280pF @ 25V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V
Current - Continuous Drain (Id) @ 25° C: 11.1A
Vgs(th) (Max) @ Id: 2V @ 42µA


Features:

• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x R_DS(on) product (FOM)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching applications


Specifications

Parameter	Symbol	Values		Unit
Continuous drain current TA=25°C TA=70°C	ID	11.1 8.9		A
Pulsed drain current TA=25°C	I Dpulse	44.5
Avalanche energy, single pulse ID=12.7 A , VDD=25V, RGS=25	EAS	126		mJ
Reverse diode dv/dt IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C	dv/dt	6		kV/s
Gate source voltage	VGS	±25		V
Power dissipation TA=25°C	Ptot	2.5		W
Operating and storage temperature	T j , T stg	-55 ... +150		°C
IEC climatic category, DIN IEC 68-1		55/150/56

Parameters:

Technical/Catalog Information	BSO4410
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11.1A
Rds On (Max) @ Id, Vgs	13 mOhm @ 11.1A, 10V
Input Capacitance (Ciss) @ Vds	1280pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	21nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSO4410 BSO4410 BSO4410INTR ND BSO4410INTRND BSO4410INTR