BSO4410T

MOSFET N-CH 30V 11.1A 8-SOIC

product image

BSO4410T Picture
SeekIC No. : 003430752 Detail

BSO4410T: MOSFET N-CH 30V 11.1A 8-SOIC

floor Price/Ceiling Price

Part Number:
BSO4410T
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 11.1A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 42µA Gate Charge (Qg) @ Vgs: 21nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1280pF @ 25V
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Gate Charge (Qg) @ Vgs: 21nC @ 5V
Input Capacitance (Ciss) @ Vds: 1280pF @ 25V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V
Current - Continuous Drain (Id) @ 25° C: 11.1A
Vgs(th) (Max) @ Id: 2V @ 42µA


Parameters:

Technical/Catalog InformationBSO4410T
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C11.1A
Rds On (Max) @ Id, Vgs13 mOhm @ 11.1A, 10V
Input Capacitance (Ciss) @ Vds 1280pF @ 25V
Power - Max2.5W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs21nC @ 5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSO4410T
BSO4410T
BSO4410XTINCT ND
BSO4410XTINCTND
BSO4410XTINCT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Undefined Category
Isolators
Semiconductor Modules
Batteries, Chargers, Holders
Boxes, Enclosures, Racks
Optoelectronics
View more