IGBT Modules N-CH 1.2KV 25A
BSM15GD120DN2E3224: IGBT Modules N-CH 1.2KV 25A
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Product : | IGBT Silicon Modules | Configuration : | Hex | ||
Collector- Emitter Voltage VCEO Max : | 1200 V | Collector-Emitter Saturation Voltage : | 2.5 V | ||
Continuous Collector Current at 25 C : | 25 A | Gate-Emitter Leakage Current : | 150 nA | ||
Power Dissipation : | 145 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | EconoPACK 2 | Packaging : | Reel |