FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Current - Continuous Drain (Id) @ 25° C: 100A
Power - Max: 104W
Packaging: Cut Tape (CT)
Gate Charge (Qg) @ Vgs: 64nC @ 5V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TDSON-8 (5.15x6.15)
Vgs(th) (Max) @ Id: 2V @ 110µA
Input Capacitance (Ciss) @ Vds: 8290pF @ 15V
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 50A, 10V
Parameters: | Technical/Catalog Information | BSC022N03SG |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 8290pF @ 15V |
| Power - Max | 104W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 64nC @ 5V |
| Package / Case | TDSON-8 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSC022N03SG
BSC022N03SG
BSC022N03SGINCT ND
BSC022N03SGINCTND
BSC022N03SGINCT
|
BSC022N03SG Data Sheet
