Features: • Ultra low operation voltage : 1.8 ~ 2.3V
• Ultra low power consumption :
Vcc = 2.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc=2V
-10 100ns (Max.) at Vcc=2V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2,CE1 and OE options
• I/O Configuration x8/x16 selectable by LB and UB pinSpecifications
| SYMBOL |
PARAMETER |
RATING |
UNITS |
| VTERM |
Terminal Voltage with Respect to GND |
-0.5 to Vcc+0.5 |
V |
| TBIAS |
Temperature Under Bias |
-40 to +125 |
|
| TSTG |
Storage Temperature |
-60 to +150 |
|
| PT |
Power Dissipation |
1.0 |
W |
| IOUT |
DC Output Current |
20 |
mA |
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.DescriptionThe BS616UV8011 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage.
Advanced CMOS technology and circuit techniques of BS616UV8011DI provide both high speed and low power features with a typical CMOS standby current of 0.6uA and maximum access time of 70/100ns in 2V operation.
Easy memory expansion of BS616UV8011DI is provided by an active LOW chip enable(
CE1), active HIGH chip enable (CE2), active LOW output enable(
OE) and three-state output drivers.
The BS616UV8011 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
The BS616UV8011 is available in 48-pin BGA package.
BS616UV8011DI Data Sheet
