BS616UV4010EI

Features: • Ultra low operation voltage : 1.8 ~ 3.6V• Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.20uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operati...

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SeekIC No. : 004301864 Detail

BS616UV4010EI: Features: • Ultra low operation voltage : 1.8 ~ 3.6V• Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.20uA (Typ.)...

floor Price/Ceiling Price

Part Number:
BS616UV4010EI
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
    Vcc = 2.0V     C-grade: 15mA (Max.) operating current
                          I-grade: 20mA (Max.) operating current
                               0.20uA (Typ.) CMOS standby current
    Vcc = 3.0V     C-grade: 20mA (Max.) operating current
                          I-grade: 25mA (Max.) operating current
                               0.25uA (Typ.) CMOS standby current
• High speed access time :
    -70     70ns (Max.) at Vcc = 2.0V
    -10   100ns (Max.) at Vcc = 2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER RATING UNITS
VTERM Terminal Voltage with Respect to GND -0.5 to Vcc+0.5 V
TBIAS Temperature Under Bias -40 to +125
TSTG Storage Temperature -60 to +150
PT Power Dissipation 1.0 W
IOUT DC Output Current 20 mA
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The BS616UV4010 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide of BS616UV4010EI both high speed and low power features with a typical CMOS standby current of 0.20uA and maximum access time of 70/100ns in 2.0V operation.

Easy memory expansion of BS616UV4010EI is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers.

The BS616UV4010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.

The BS616UV4010 is available in DICE form, JEDEC standard 44-pin TSOP Type 2 package and 48-pin BGA package.


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