BS616UV2021

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques of BS616UV2021 provide both high speed and low power features with a typical CMOS standby current of 0.08uA and maximum access time of 70/100ns in 2.0V operation.

Easy memory expansion of BS616UV2021 is provided by active HIGH chip enable2(CE2), active LOW chip enable1(CE1), active LOW output enable(OE) and three-state output drivers.

The BS616UV2021 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.

The BS616UV2021 is available in DICE form and 48-pin BGA type.