BS616UV2019

• Wide V_cc operation voltage:
                               C-grade: 1.8V~3.6V
                               I-grade: 1.9V~3.6V
                               (Vcc_min.=1.65V at 25)
• Ultra low power consumption :
     Vcc = 2.0V             C-grade: 8mA (Max.) operating current
                                  I -grade: 10mA (Max.) operating current
                                  0.20uA (Typ.) CMOS standby current
     Vcc = 3.0V            C-grade: 11mA (Max.) operating current
                                  I -grade: 13mA (Max.) operating current
                                  0.30uA (Typ.) CMOS standby current
• High speed access time :
     -85            85ns (Max.)
     -10           100ns (Max.)
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
• Data retention supply voltage as low as 1.0V

The BS616UV2019 is a high performance, ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques of BS616UV2019 provide both highspeed and low power features with a typical CMOS standby current of 0.2uA at 2.0V/25 and maximum access time of 85ns at 85.

Easy memory expansion is provided by active LOW chip enable (CE),active LOW output enable(OE) and three-state output drivers.

The BS616UV2019 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.

The BS616UV2019 is available in DICE form, JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package.