Features: •Ultra low operation voltage : 1.8 ~ 2.3V•Ultra low power consumption : Vcc= 1.8V C-grade : 25mA (Max.) operating current I-grade : 30mA (Max.) operating current1.2uA (Typ.) CMOS standby current•High speed access time : -70 70ns (Max.) at Vcc= 2.0V -10 100ns (Max.) at ...
BS616UV1620: Features: •Ultra low operation voltage : 1.8 ~ 2.3V•Ultra low power consumption : Vcc= 1.8V C-grade : 25mA (Max.) operating current I-grade : 30mA (Max.) operating current1.2uA (Typ.) CM...
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Features: • Very low operation voltage : 2.4 ~ 5.5V• Very low power consumption : Vcc ...
SYMBOL |
PARAMETER |
RATING |
UNITS |
VTERM |
Terminal Voltage with Respect to GND |
-0.5 to Vcc+0.5 |
V |
TBIAS |
Temperature Under Bias |
-40 to +125 |
|
TSTG |
Storage Temperature |
-60 to +150 |
|
PT |
Power Dissipation |
1.0 |
W |
IOUT |
DC Output Current |
20 |
mA |
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not im maximum rating conditions for extended periods may affect
reliability.
The BS616UV1620 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates ina wide range of 1.8V to 2.3V supply voltage.
Advanced CMOS technology and circuit techniques of BS616UV1620 provide both high speed and low power features with a typical CMOS standby current of 1.2uA and maximum access time of 70/100ns in 2.0V operation.
This device provide three control inputs and three states outputdrivers for easy memory expansion.
The BS616UV1620 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV1620 is available in DICE form and 48-pin BGA type.