BS616UV1010

1. Stresses greater than those listed under  ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and  functional  operation of the device at these or any other  conditions above  those  indicated in the operational  sections of this  specification is not impl maximum   rating   conditions  for   extended  periods  may affect
reliability.

The BS616UV1010 is a high performance, ultra low power CMOS Static   Random Access Memory organized as 65,536  words by 16 bits and operates from a wide  range of 1.8V to 3.6V supply voltage.

Advanced  CMOS  technology  and  circuit  techniques of BS616UV1010  provide both high speed and  low power features  with a  typical  CMOS  standby  current of 0.01uA and  maximum access time of 150ns in 2V operation.

Easy    memory    expansion   of BS616UV1010 is provided   by an active  LOW   chip  enable(CE ) and  active LOW  output enable(OE )  and  three-state output drivers.

The BS616UV1010 has an  automatic  power down feature, reducing the power  consumption significantly when chip is deselected.

The   BS616UV1010  is  available  in  the  JEDEC  standard 44-pin TSOP Type II and 48-pin mini-BGA.