BS616LV8017

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. 2.0V in case of AC pulse width less than 30 ns.

The BS616LV8017 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques of BS616LV8017 provide both high speed and low power features with typical CMOS standby current of 0.8uA at 3.0V/25OC and maximum access time of 55ns at 3.0V/85OC.

Easy memory expansion of BS616LV8017 is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers.

The BS616LV8017 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.

The BS616LV8017 is available in DICE form, JEDEC standard 44-pin TSOP II and 48-ball BGA package.