BS616LV8010FI

Features:

* Vcc operation voltage : 2.7~3.6V
* Very low power consumption :     
Vcc = 3.0V  C-grade: 30mA (@55ns) operating current
                   I -grade:31mA (@55ns) operating current
                 C-grade: 24mA (@70ns) operating current
                  I -grade: 25mA (@70ns) operating current
                1.5uA (Typ.) CMOS standby current
* High speed access time :
-55          55ns
-70          70ns
* Automatic power down when chip is deselected
* Three state outputs and TTL compatible
* Fully static operation
* Data retention supply voltage as low as 1.5V
* Easy expansion with CE and OE options
* I/O Configuration x8/x16 selectable by LB and UB pin


Specifications

SYMBOL	PARAMETER	RATING	UNITS
VTERM	Terminal    Voltage    with Resepect to GND	0.5 to Vcc+0.5	V
TBIAS	Temperature Under Bias	-40 to +85	O C
TSTG	Storage Temperature	-60 to +150	O C
PT	Power Dissipation	1.0	W
I	DC Output Current	20	mA

Description

The BS616LV8010 is a high performance, very low  power CMOS Static  Random Access Memory organized as 524,288  words  by  16  bits  and
operates from a range of  2.7V to 3.6V supply voltage.

Advanced  CMOS  technology  and  circuit  techniques of BS616LV8010FI provide both high speed and  low  power features  with a  typical  CMOS  standby  current
of 1.5uA at 3V/25and maximum access time of  55ns at 3V/85. Easy memory expansion is provided by an active LOW chip enable (CE) ,active LOW output enable(OE) and three-state output drivers.

The BS616LV8010 has an automatic  power down feature, reducing  the  power consumption significantly when chip is deselected. The BS616LV8010 is available in 48B BGA and 44L TSOP2 packages.