Features: • Very low operation voltage : 2.4 ~ 3.6V• Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current• High speed access time :-70 70ns (Max.) at Vcc=3.0V-10 100ns (Max.) at V...
BS616LV4023: Features: • Very low operation voltage : 2.4 ~ 3.6V• Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.25uA (Typ.) ...
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Features: • Very low operation voltage : 2.4 ~ 5.5V• Very low power consumption : Vcc ...
SYMBOL | PARAMETER | RATING | UNITS |
V TERM | Terminal Voltage with Respect to GND |
-0.5 to Vcc+0.5 |
V |
T BIAS | Temperature Under Bias | -40 to +125 | |
T STG | Storage Temperature | -60 to +150 | |
P T | Power Dissipation | 1.0 | W |
I OUT | DC Output Current | 20 | mA |
The BS616LV4023 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques of BS616LV4023provide both high speed and low power features with a typical CMOS standby current of 0.25uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by active HIGH chip enable2(CE2), active LOW chip enable1(CE1), active LOW output enable(OE) and three-state output drivers.
The BS616LV4023 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
The BS616LV4023 is available in DICE form and 48-ball BGA type.