Features: • Very low power consumption : Vcc = 5.0V C-grade: 63mA (@55ns) operating current I-grade: 65mA (@55ns) operating current C-grade: 53mA (@70ns) operating current I -grade: 55mA (@70ns) operating current 2.0uA (Typ.) CMOS standby current• High speed access time : -55 55ns -70 ...
BS616LV4018: Features: • Very low power consumption : Vcc = 5.0V C-grade: 63mA (@55ns) operating current I-grade: 65mA (@55ns) operating current C-grade: 53mA (@70ns) operating current I -grade: 55mA (@70n...
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Features: • Very low operation voltage : 2.4 ~ 5.5V• Very low power consumption : Vcc ...
SYMBOL | PARAMETER |
RATING |
UNITS |
VTERM | Terminal Voltage with Respect to GND |
-0.5 to Vcc+0.5 |
V |
TBIAS | Temperature Under Bias |
-40 to +85 |
|
TSTG | Storage Temperature |
-60 to +150 |
|
PT | Power Dissipation |
1.0 |
W |
IOUT | DC Output Current |
20 |
mA |
The BS616LV4018 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 2.0uA at 5.0V/25oC and maximum access time of 55ns at 5.0V/85oC.
Easy memory expansion is provided by an active LOW chip enable (CE) ,active LOW output enable(OE) and three-state output drivers.
The BS616LV4018 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
The BS616LV4018 is available in DICE form , JEDEC standard 44-pin TSOP Type II package and 48-ball BGA package.