Features: WideVccoperation voltage : 2.4V ~ 5.5V Very low power consumption : Vcc= 3.0V C-grade: 29mA (@55ns) operating current I -grade:30mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade:25mA (...
BS616LV4016: Features: WideVccoperation voltage : 2.4V ~ 5.5V Very low power consumption : Vcc= 3.0V C-grade: 29mA (@55ns) operating current I -grade:30mA (@55ns) operating curr...
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Features: • Very low operation voltage : 2.4 ~ 5.5V• Very low power consumption : Vcc ...
SYMBOL | PARAMETER | RATING | UNITS |
VTERM | Terminal Voltage with Respect to GND |
-0.5 to Vcc+0.5 |
V |
TBIAS | Temperature Under Bias | -40 to +85 | |
TSTG | Storage Temperature | -60 to +150 | |
PT | Power Dissipation | 1.0 | W |
IOUT | DC Output Current | 20 | mA |
The BS616LV4016 is a high performance , very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both highspeed and low power features with atypical CMOS standby current of 0.3uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85oC.
Easy memory expansion is provided by active LOW chip enable(CE ), active LOW output enable(OE ) and three-state output drivers.
The BS616LV4016 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
The BS616LV4016 is available in DICE form , JEDEC standard 44-pin TSOP Type II package and 48-ball BGA package.