BS616LV2019

Features:

Vcc operation voltage range : 2.7V ~ 3.6V
Very low power consumption :     
  Vcc= 3.0V    C-grade: 23mA (@55ns) operating current
                      I -grade:25mA (@55ns) operating current
                     C-grade: 15mA (@70ns) operating current
                      I -grade:16mA (@70ns) operating current
                     0.3uA(Typ.)CMOSstandbycurrent
High speed access time :
      -55          55ns
      -70          70ns
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE and OE options
I/O Configuration x8/x16 selectable by LB and UB pin


Pinout




Specifications

SYMBOL	PARAMETER	RATING	UNITS
VTERM	Terminal Voltage with Respect to GND	-0.5 to Vcc+0.5	V
Vcc	Power Supply	-0.5 to Vcc+0.5	V
TBIAS	Temperature Under Bias	-40 to +85
TSTG	Storage Temperature	-60 to +150
PT	Power Dissipation	1.0	W
IOUT	DC Output Current	20	mA

Description

The BS616LV2019 is a high performance , very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits  and operates from a range of 2.7V to 3.6V supply voltage.

Advanced  CMOS  technology  and  circuit  techniques of BS616LV2019 provide both high speed and low power features with atypical  CMOS  standby current  of 0.3uA at 3.0V/25 and maximum access time of  55ns at 2.7V/85 .Easy  memory  expansion  is provided by active  LOW  chip enable(CE), active LOW  output enable(OE) and three-state output drivers.

The BS616LV2019 has an  automatic  power down feature, reducing the power consumption significantly when chip is deselected.

The BS616LV2019  is  available in  DICE form , JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package.