Features: •Vcc operation voltage : 4.5V ~ 5.5V•Very low power consumption : Vcc= 5.0VC-grade: 60mA (@55ns) operating current I -grade:62mA (@55ns) operating current C-grade: 53mA (@70ns) operating current I -grade:55mA (@70ns) operating current 1.0uA(Typ.)CMOSstandbycurrent•High ...
BS616LV2017: Features: •Vcc operation voltage : 4.5V ~ 5.5V•Very low power consumption : Vcc= 5.0VC-grade: 60mA (@55ns) operating current I -grade:62mA (@55ns) operating current C-grade: 53mA (@70ns)...
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Features: • Very low operation voltage : 2.4 ~ 5.5V• Very low power consumption : Vcc ...
SYMBOL | PARAMETER | RATING | RATING |
VTERM | Terminal Voltage with Respect to GND | -0.5 to Vcc+0.5 | V |
TBIAS | Temperature Under Bias | -40 to +85 | |
TSTG | Storage Temperature | -60 to +150 | |
PT | Power Dissipation | 1.0 | W |
IOUT | DC Output Current | 20 | mA |
The BS616LV2017 is a high performance , very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques of BS616LV2017 provide both high speed and low power features with atypical CMOS standby current of 1.0uA at 5.0V/25 and maximum access time of 55ns at 5.0V/85.Easy memory expansion is provided by active LOW chip enable(CE</a>), active LOW output enable(OE) and three-state output drivers.
The BS616LV2017 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
The BS616LV2017 is available in DICE form , JEDEC standard 44-pin TSOP Type II package and 48-ball BGA package.