Features: • Vcc operation voltage : 2.7 ~ 3.6V• Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@70ns) operating current I -grade: 37mA (@70ns) operating current 3.0uA (Typ.) CMOS standby current...
BS616LV1623: Features: • Vcc operation voltage : 2.7 ~ 3.6V• Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@7...
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Features: • Very low operation voltage : 2.4 ~ 5.5V• Very low power consumption : Vcc ...
SYMBOL | PARAMETER | RATING | UNITS |
VTERM | Terminal Voltage with Respect to GND |
-0.5 to Vcc+0.5 |
V |
TBIAS | Temperature Under Bias | -40 to +85 | |
TSTG | Storage Temperature | -60 to +150 | |
PT | Storage Temperature | 1.0 | W |
IOUT | DC Output Current | 20 | mA |
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features of BS616LV1623 with a typical CMOS standby current of 3.0uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85 .
BS616LV1623 provide three control inputs and three states output drivers for easy memory expansion.
The BS616LV1623 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. It is available in 48-pin 12mmx20mm TSOP1 package.