BS616LV1622

Features: • Wide Vcc operation voltage : 2.4 ~ 5.5V• Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@70ns) operating current I -grade: 37mA (@70ns) operating current 3.0uA (Typ.) CMOS standby curre...

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SeekIC No. : 004301811 Detail

BS616LV1622: Features: • Wide Vcc operation voltage : 2.4 ~ 5.5V• Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36m...

floor Price/Ceiling Price

Part Number:
BS616LV1622
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Wide Vcc operation voltage : 2.4 ~ 5.5V
• Very low power consumption :
   Vcc = 3.0V C-grade: 45mA (@55ns) operating current
   I -grade: 46mA (@55ns) operating current
   C-grade: 36mA (@70ns) operating current
   I -grade: 37mA (@70ns) operating current
   3.0uA (Typ.) CMOS standby current
   Vcc = 5.0V C-grade: 113mA (@55ns) operating current
   I -grade: 115mA (@55ns) operating current
   C-grade: 90mA (@70ns) operating current
   I -grade: 92mA (@70ns) operating current
  15uA (Typ.) CMOS standby current
• High speed access time :
   -55 55ns
   -70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIOLB and UB pin



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER RATING UNITS
VTERM Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
V
TBIAS Temperature Under Bias -40 to +85
TSTG Storage Temperature -60 to +150
PT Power Dissipation 1.0 W
IOUT DC Output Current 20 mA

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The BS616LV1622 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques of BS616LV1622 rovide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC . This device provide three control inputs and three states output drivers for easy memory expansion.

The BS616LV1622 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.

The BS616LV1622 is available in 48-pin 12mmx20mm TSOP1 package.




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