BS616LV1611FC

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The BS616LV1611 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features of BS616LV1611FC with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable(CE1) , active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers.

The BS616LV1611 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1611 is available in 48-pin BGA package.